GaN-on-SiC RF and microwave transistors for S-band radar applications introduced by Integra Technologies EL SEGUNDO, Calif. – Integra Technologies Inc. in El Segundo, Calif., is introducing a pair of 135- and a 130-Watt gallium arsenide-on-silicon-carbide (GaN-on-SiC) RF and microwave transistors for S-band radar applications. The IGT2731M130 is a 50-Ohm matched high-power GaN high-electron-mobility transistor (HEMT), supplying a minimum of 130 Watts of peak pulsed power, a gain of 13.5 dB and a drain efficiency of 55 percent, at pulse conditions of 300 microseconds at 10 percent duty cycle. It operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz, and is a depletion mode […]
RF and Microwave
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